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Other articles related with "electron affinity"：
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48102 |
Ai-Gen Xie(谢爱根), Hong-Jie Dong(董红杰), and Yi-Fan Liu(刘亦凡) |
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Secondary electron emission and photoemission from a negative electron affinity semiconductor with large mean escape depth of excited electrons |
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Chin. Phys. B
2023 Vol.32 (4): 48102-048102
[Abstract]
(207)
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[PDF 750 KB]
(62)
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73201 |
Xiao-Xi Fu(付筱茜), Ru-Lin Tang(唐如麟), Yu-Zhu Lu(陆禹竹), Chuan-Gang Ning(宁传刚) |
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Accurate electron affinity of atomic cerium and excited states of its anion |
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Chin. Phys. B
2020 Vol.29 (7): 73201-073201
[Abstract]
(733)
[HTML 0 KB]
[PDF 1141 KB]
(135)
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13203 |
Xue Yang(杨雪), Haifeng Xu(徐海峰), Bing Yan(闫冰) |
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Accurate calculation of electron affinity for S3 |
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Chin. Phys. B
2019 Vol.28 (1): 13203-013203
[Abstract]
(739)
[HTML 1 KB]
[PDF 359 KB]
(131)
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57703 |
Feng Liang(梁锋), Ping Chen(陈平), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Zhi-Juan Zhao(赵志娟), Zong-Shun Liu(刘宗顺), Jian-Jun Zhu(朱建军), Jing Yang(杨静), Wei Liu(刘炜), Xiao-Guang He(何晓光), Xiao-Jing Li(李晓静), Xiang Li(李翔), Shuang-Tao Liu(刘双韬), Hui Yang(杨辉), Li-Qun Zhang(张立群), Jian-Ping Liu(刘建平), Yuan-Tao Zhang(张源涛), Guo-Tong Du(杜国同) |
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Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H-SiC |
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Chin. Phys. B
2016 Vol.25 (5): 57703-057703
[Abstract]
(590)
[HTML 1 KB]
[PDF 383 KB]
(346)
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57901 |
Shi Ming (侍铭), Chen Ping (陈平), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生), Zheng Jun (郑军), Cheng Bu-Wen (成步文), Zhu Jian-Jun (朱建军), Liu Zong-Shun (刘宗顺), Liu Wei (刘炜), Li Xiang (李翔), Zhao Dan-Mei (赵丹梅), Wang Qi-Ming (王启明), Liu Jian-Ping (刘建平), Zhang Shu-Ming (张书明), Yang Hui (杨辉) |
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Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage |
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Chin. Phys. B
2015 Vol.24 (5): 57901-057901
[Abstract]
(683)
[HTML 1 KB]
[PDF 677 KB]
(326)
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57901 |
Xie Ai-Gen (谢爱根), Zhan Yu (詹煜), Gao Zhi-Yong (高志勇), Wu Hong-Yan (吴红艳) |
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Formula for average energy required to produce a secondary electron in an insulator |
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Chin. Phys. B
2013 Vol.22 (5): 57901-057901
[Abstract]
(832)
[HTML 1 KB]
[PDF 215 KB]
(439)
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87902 |
Zhang Jun-Ju (张俊举), Chang Ben-Kang (常本康), Fu Xiao-Qian (付小倩), Du Yu-Jie (杜玉杰), Li Biao (李飙), Zou Ji-Jun (邹继军) |
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Influence of cesium on the stability of a GaAs photocathode |
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Chin. Phys. B
2011 Vol.20 (8): 87902-087902
[Abstract]
(1603)
[HTML 0 KB]
[PDF 206 KB]
(1054)
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48501 |
Zhang Yi-Jun(张益军), Zou Ji-Jun(邹继军), Wang Xiao-Hui(王晓晖), Chang Ben-Kang(常本康), Qian Yun-Sheng(钱芸生), Zhang Jun-Ju(张俊举), and Gao Pin(高频) |
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Comparison of the photoemission behaviour between negative electron affinity GaAs and GaN photocathodes |
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Chin. Phys. B
2011 Vol.20 (4): 48501-048501
[Abstract]
(1390)
[HTML 1 KB]
[PDF 942 KB]
(1176)
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3002 |
Li Jian-Feng(李建丰), Chang Wen-Li(常文利), Ou Gu-Ping(欧谷平), and Zhang Fu-Jia(张福甲) |
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Air-stable ambipolar organic field effect transistors with heterojunction of pentacene and N,N'-bis(4-trifluoromethylben-zyl)perylene-3,4,9,10-tetracarboxylic diimide |
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Chin. Phys. B
2009 Vol.18 (7): 3002-3007
[Abstract]
(1366)
[HTML 1 KB]
[PDF 1577 KB]
(862)
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677 |
Wang Hong-Yan (王红艳), Zhu Zheng-He (李朝阳), Li Chao-Yang (唐永建), Tang Yong-Jian (朱正和) |
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Geometry and electronic properties of Cun(n≤9) |
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Chin. Phys. B
2004 Vol.13 (5): 677-681
[Abstract]
(1339)
[HTML 1 KB]
[PDF 220 KB]
(489)
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483 |
Ruan Cun-Jun (阮存军) |
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Experimental study on the activation process of GaAs spin-polarized electron source |
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Chin. Phys. B
2003 Vol.12 (5): 483-487
[Abstract]
(1014)
[HTML 0 KB]
[PDF 215 KB]
(475)
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